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| ADVANCED LINEAR DEVICES, INC. ALD1106/ALD1116 QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY GENERAL DESCRIPTION The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1106/ALD1116 offer high input impedance and negative current temperature coefficient. The transistor pairs are matched for minimum offset voltage and differential thermal response, and they are designed for switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. The ALD1106/ALD1116 are building blocks for differential amplifier input stages, transmission gates, and multiplexer applications, current sources and many precision analog circuits. APPLICATIONS * * * * * * * * Precision current mirrors Precision current sources Voltage choppers Differential amplifier input stage Voltage comparator Data converters Sample and Hold Analog signal processing PIN CONFIGURATION ALD1116 DN1 GN1 SN1 V1 2 3 4 DA, PA, SA PACKAGE 8 7 6 5 DN2 GN2 SN2 V+ FEATURES * Low threshold voltage of 0.7V * Low input capacitance * Low Vos 2mV typical * High input impedance -- 1014 typical * Negative current (I DS) temperature coefficient * Enhancement-mode (normally off) * DC current gain 10 9 * Low input and output leakage currents ORDERING INFORMATION Operating Temperature Range* -55C to +125C 0C to +70C 0C to +70C 8-Pin CERDIP Package ALD1116 DA 14-Pin CERDIP Package ALD1106 DB 8-Pin Plastic Dip Package ALD1116 PA 14-Pin Plastic Dip Package ALD1106 PB 8-Pin SOIC Package ALD1116 SA 14-Pin SOIC Package ALD1106 SB ALD1106 DN1 GN1 SN1 VDN4 GN4 SN4 1 2 3 4 5 6 7 DB, PB, SB PACKAGE 14 13 12 11 10 9 8 DN2 GN2 SN2 V+ DN3 GN3 SN3 1 * Contact factory for industrial temperature range. BLOCK DIAGRAM ALD1106 V+ (11) DN1 (1) DN2 (14) BLOCK DIAGRAM ALD1116 V+ (5) DN3 (10) DN4 (5) DN1 (1) ~ ~ DN2 (8) GN1 (2) GN2 (13) GN3 (9) GN4 (6) GN1 (2) GN2 (7) SN1 (3) V- (4) SN2 (12) SN3 (8) V- (4) SN4 (7) SN1 (3) V- (4) SN2 (6) (c) 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com ABSOLUTE MAXIMUM RATINGS Drain-source voltage, VDS Gate-source voltage, V GS Power dissipation Operating temperature range Storage temperature range Lead temperature, 10 seconds 13.2V 13.2V 500 mW 0C to +70C -55C to +125C -65C to +150C +260C PA, SA, PB, SB package DA, DB package OPERATING ELECTRICAL CHARACTERISTICS T A = 25C unless otherwise specified ALD1106 Parameter Gate Threshold Voltage Offset Voltage VGS1-VGS2 Gate Threshold Temperature Drift 2 On Drain Current Transconductance ALD1116 Max 1.0 Min 0.4 Typ 0.7 Max 1.0 Unit V Test Conditions IDS = 1.0A VGS = VDS Symbol VT Min 0.4 Typ 0.7 VOS 2 10 2 10 mV IDS = 10A VGS = VDS TCVT -1.2 -1.2 mV/C IDS (ON) 3.0 4.8 3.0 4.8 mA VGS = VDS = 5V GIS Gfs GOS 1.0 1.8 0.5 200 1.0 1.8 0.5 200 mmho VDS = 5V IDS= 10mA % mho VDS = 5V IDS = 10mA Mismatch Output Conductance Drain Source RDS (ON) On Resistance Drain Source On Resistence Mismatch Drain Source Breakdown Voltage Off Drain Current 1 Gate Leakage Current Input Capacitance 2 Notes: 1 2 350 500 350 500 VDS = 0.1V VGS = 5V DS (ON) 0.5 0.5 % VDS = 0.1V VGS = 5V BVDSS IDS (OFF) 12 12 V IDS = 1.0A VGS = 0V VDS =12V VGS = 0V TA = 125C VDS = 0V VGS = 12V TA = 125C 10 400 4 10 1 3 10 400 4 10 1 3 pA nA pA nA pF IGSS CISS 0.1 0.1 1 1 Consists of junction leakage currents Sample tested parameters ALD1106/ALD1116 Advanced Linear Devices 2 TYPICAL PERFORMANCE CHARACTERISITCS OUTPUT CHARACTERISTICS 1000 LOW VOLTAGE OUTPUT CHARACTERISTICS DRAIN SOURCE CURRENT (A) VBS = 0V TA = 25C 500 VGS = 12V 6V 4V 2V DRAIN SOURCE CURRENT (mA) 20 VBS = 0V TA = 25C VGS = 12V 10V 8V 15 0 10 6V 4V 2V -500 5 0 0 2 4 6 8 10 12 -1000 -160 -80 0 80 160 DRAIN SOURCE VOLTAGE (V) DRAIN SOURCE VOLTAGE (mV) FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE FORWARD TRANSCONDUCTANCE (mmho) TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS 20 20 10 5 TA = +125C 2 1 0.5 0.2 0 2 4 IDS = 1mA 6 8 10 12 VBS = 0V f = 1KHz TA = +25C IDS = 10mA DRAIN SOURCE CURRENT (A) VGS = VDS TA = 25C 15 VBS = 0V 10 -2V -4V -6V -8V -10V 5 -12V 0 0 0.8 1.6 2.4 3.2 4.0 DRAIN SOURCE VOLTAGE (V) GATE SOURCE VOLTAGE (V) DRAIN SOURCE ON RESISTANCE RDS (ON) vs. GATE SOURCE VOLTAGE DRAIN SOURCE ON RESISTANCE (K) 100 OFF DRAIN CURRENT vs. AMBIENT TEMPERATURE OFF DRAIN SOURCE CURRENT (pA) 1000 VDS = +12V VGS = VBS = 0V 100 VDS = 0.2V VBS = 0V 10 TA = +125C 1 10 0.1 0 TA = +25C 2 4 6 8 10 12 1 -50 -25 0 +25 +50 +75 +100 +125 GATE SOURCE VOLTAGE (V) AMBIENT TEMPERATURE (C) ALD1106/ALD1116 Advanced Linear Devices 3 ALD1106/ALD1116 Advanced Linear Devices 4 |
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